Non-volatile dynamic random access memory
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United States of America Patent
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Sep 28, 2004
Grant Date -
Jan 29, 2004
app pub date -
Mar 19, 2003
filing date -
Mar 19, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In accordance with the present invention, a memory cell includes a non-volatile device and a DRAM cell. The DRAM cell further includes an MOS transistor and a capacitor. The non-volatile device include a control gate region and a guiding gate region that may partially overlap. The non-volatile device is erased prior to being programmed. Programming of the non-volatile device may be done via hot-electron injection or Fowler-Nordheim tunneling. When a power failure occurs, the data stored in the DRAM is loaded in the non-volatile devices. After the power is restored, the data stored in the non-volatile device is restored in the DRAM cell.
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