Semiconductor device having a low-resistance gate electrode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6800543
APP PUB NO 20030170942A1
SERIAL NO

10302245

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PS4 LUXCO S.A.R.L.LUXEMBOURG, LU167

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Taguwa, Tetsuya Tokyo, JP 25 163

Cited Art Landscape

Patent Info (Count) # Cites Year
 
UNITED MICROELECTRONICS CORP. (1)
* 5350698 Multilayer polysilicon gate self-align process for VLSI CMOS device 43 1993
 
SIEMENS AKTIENGESELLSCHAFT (1)
* 4782033 Process for producing CMOS having doped polysilicon gate by outdiffusion of boron from implanted silicide gate 24 1986
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
* 6277719 Method for fabricating a low resistance Poly-Si/metal gate 15 1999
 
INFINEON TECHNOLOGIES AG (1)
* 5190888 Method for producing a doped polycide layer on a semiconductor substrate 23 1991
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (2)
* 5441904 Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries 69 1994
* 6306743 Method for forming a gate electrode on a semiconductor substrate 39 2001
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
CYPRESS SEMICONDUCTOR CORPORATION (2)
7151048 Poly/silicide stack and method of forming the same 0 2002
8445381 Oxide-nitride stack gate dielectric 0 2007
 
SANDISK TECHNOLOGIES LLC (1)
9401279 Transistor gate and process for making transistor gate 0 2013
 
NANYA TECHNOLOGY CORPORATION (2)
* 7101777 Methods for manufacturing stacked gate structure and field effect transistor provided with the same 4 2004
* 2005/0074,957 Methods for manufacturing stacked gate structure and field effect transistor povided with the same 4 2004
 
STMICROELECTRONICS S.R.L. (2)
* 7199028 Method for manufacturing semiconductor device 0 2003
* 2004/0266,212 Method for manufacturing semiconductor device 0 2003
 
ELPIDA MEMORY, INC. (1)
* 2008/0061,386 SEMICONDUCTOR DEVICE INCLUDING A GATE ELECTRODE HAVING A POLYMETAL STRUCTURE 4 2007
 
SAMSUNG ELECTRONICS CO., LTD. (2)
* 7534709 Semiconductor device and method of manufacturing the same 5 2005
* 2006/0014,355 Semiconductor device and method of manufacturing the same 2 2005
 
RAMBUS INC. (1)
* 7582554 Method for manufacturing semiconductor device 2 2007
 
SK HYNIX INC. (1)
9064854 Semiconductor device with gate stack structure 0 2013
 
HYNIX SEMICONDUCTOR INC. (6)
7902614 Semiconductor device with gate stack structure 1 2007
8008178 Method for fabricating semiconductor device with an intermediate stack structure 1 2007
* 2008/0160,746 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE 1 2007
* 7989281 Method for manufacturing dual gate in semiconductor device 0 2008
* 2009/0093,097 Method for Manufacturing Dual Gate in Semiconductor Device 2 2008
8441079 Semiconductor device with gate stack structure 1 2011
 
AVIZA TECHNOLOGY LIMITED (1)
* 2004/0214,417 Methods of forming tungsten or tungsten containing films 2 2004
* Cited By Examiner