Semiconductor device having a low-resistance gate electrode

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United States of America Patent

PATENT NO 6800543
APP PUB NO 20030170942A1
SERIAL NO

10302245

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Abstract

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A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
PS4 LUXCO S A R L208 VAL DES BONS MALADES LUXEMBOURG L-2121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Taguwa, Tetsuya Tokyo, JP 25 171

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