Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers
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United States of America Patent
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Oct 5, 2004
Issued Date -
N/A
app pub date -
Sep 30, 2002
filing date -
May 18, 1998
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Expired
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Abstract
A processing method includes patterning a material over a semiconductive substrate having a center and an edge. The method includes forming a layer of first material against a second material and over the semiconductive substrate and first etching the first material in a reaction chamber. First etching provides a first center-to-edge uniformity across the wafer surface and a first selectivity for the first material relative to the second material. The method also includes second etching the first material to provide a second center-to-edge uniformity across the wafer surface and a second selectivity greater than the first selectivity for the first material relative to the second material. The second center-to-edge uniformity is less than the first center-to-edge uniformity. The method also includes cleaning a component of the first material from at least one sidewall of the reaction chamber between the first and second etchings.
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