US Patent No: 6,800,890

Number of patents in Portfolio can not be more than 2000

Memory architecture with series grouped by cells

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ALSO PUBLISHED AS: 20040232457
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Abstract

An IC with a memory array having a series architecture is disclosed. A memory cell of a series group comprises a transistor coupled to a capacitor in parallel. The capacitor includes first and second subcapacitors, one stacked one on top of the other. Providing a capacitor with two or more subcapacitors in a stack advantageously increases the capacitance of a capacitor without increasing surface area.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
QIMONDA AGMUNICH4545

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bruchhaus, Rainer Munich, DE 49 199
Hilliger, Andreas Kanagawa-ken, JP 26 35
Wohlfahrt, Joerg Kanagawa, JP 19 70

Cited Art

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (4)
5,903,492 Semiconductor memory device and various systems mounting them 100 1997
6,603,161 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 14 2001
6,521,929 Semiconductor device having ferroelectric memory cells and method of manufacturing the same 9 2001
6,507,510 Nonvolatile semiconductor memory device having ferroelectric capacitors 6 2001
 
SAMSUNG ELECTRONICS CO., LTD. (2)
6,211,005 Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereof 11 1999
6,376,325 Method for fabricating a ferroelectric device 21 2000

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (1)
7,821,049 Semiconductor memory device and method for fabricating semiconductor memory device 0 2008
 
QIMONDA AG (1)
7,859,890 Memory device with multiple capacitor types 0 2008
 
SAMSUNG ELECTRONICS CO., LTD. (1)
7,098,123 Methods of forming a semiconductor device having a metal gate electrode and associated devices 0 2004
 
SEAGATE TECHNOLOGY INTERNATIONAL (1)
7,888,718 Charge-dipole coupled information storage medium 0 2004
 
SONY CORPORATION (1)
8,101,982 Memory device which comprises a multi-layer capacitor 1 2007

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