Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads
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United States of America Patent
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Oct 5, 2004
Grant Date -
Oct 23, 2003
app pub date -
Apr 19, 2002
filing date -
Apr 19, 2002
priority date (Note) -
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Abstract
A Giant Magneto-Resistive (GMR) sensor (800) provides increased GMR effect through the use of composite laminate structure (870) as the second of two self-pinned layers of Anti-Parallel (AP) self-pinned layer 865. A positive magnetostrictive material forms the embedded layer (820) of AP pinned layer (865) to increase the perpendicular to Air Bearing Surface (ABS) intrinsic anisotropy field (H.sub.k). The embedded layer (820) of AP pinned layer (865) has no effect on the GMR stack texture, since outer ferromagnetic layers (815 and 825) are provided to control the GMR stack texture.
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