Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers
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United States of America Patent
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Oct 12, 2004
Grant Date -
Jul 24, 2003
app pub date -
Dec 21, 2001
filing date -
Dec 21, 2001
priority date (Note) -
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Abstract
A method is provided for etching quaternary interface layers of In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y which are formed between layers of GaAs and InGaP in heterojunction bipolar transistors (HBTs). In accordance with the method, the interface is exposed by etching the GaAs layer with an etchant that is selective to InGaP. The interface is then etched with a dilute aqueous solution of HCl and H.sub.2 O.sub.2 that is selective to InGaP. The controlled etching provided by this methodology allows HBTs to be manufactured with more sophisticated, near ideal designs which may contain multiple GaAs/InGaP interfaces.
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