Importance

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Abstract

An SRAM bit cell with cross-coupled inverters has separate write and read buses. Writing is performed through an NMOS pass transistor. Reading is performed through a PMOS transistor. Because the NMOS transistor does not pass a logic 1 as easily as logic 0, assistance is needed to speed up writing of a logic 1 value relative to the time required to write a logic 0 value. An NMOS pre-charge transistor is coupled between the read bus and ground potential; and, a read is performed simultaneously with a write. This conditions the cell by weakening one of the inverters, such that they cross-couple more quickly when a logic 1 value is written into the cell. Alternatively, a single-ended read/write bus can be coupled to the NMOS pass transistor with write-assistance provided by grounding the PMOS pass transistor.

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First Claim