Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor
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United States of America Patent
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Oct 19, 2004
Grant Date -
Nov 20, 2003
app pub date -
May 16, 2002
filing date -
May 16, 2002
priority date (Note) -
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Abstract
A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.
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