Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
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United States of America Patent
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Oct 19, 2004
Grant Date -
Apr 1, 2004
app pub date -
Sep 30, 2002
filing date -
Sep 30, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A microdevice that comprises a device microstructure (22), a substrate (24), and a silicon cap (30, 130). The device microstructure (22) is attached to the substrate (24). The silicon cap (30, 130) has a base portion (32, 132) and a sidewall (34, 134) that defines a recess (36, 136) in the cap (30, 130). The silicon cap (30, 130) is attached to the substrate (24) such that the recess (36, 136) in the cap (30, 130) houses the device microstructure (22) and forms a hermetically sealed cavity (38) adjacent the device microstructure (22). The silicon cap (30, 130) further has a single crystalline silicon getter layer (40, 140) embedded along its recess (36, 136) for maintaining a vacuum within the cavity (38). There are also methods of making a microdevice containing a single crystalline silicon getter layer (40, 140).
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