Semiconductor device
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United States of America Patent
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Oct 19, 2004
Issued Date -
N/A
app pub date -
Jan 23, 2002
filing date -
Oct 16, 1995
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A semiconductor device has a plurality of gate bus wirings and source bus wirings on one of paired substrates. Moreover, an inter-layer insulating film made of an organic material is provided on thin film transistors of respective picture elements, and a picture element electrode is provided on the inter-layer insulating film. Furthermore, the semiconductor device is provided with an additional capacity common wiring which is provided on the inter-layer insulating film and forms an additional capacity section between the picture element electrode and the additional capacity common wiring.
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