Method of forming a power device and structure therefor
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United States of America Patent
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Oct 26, 2004
Grant Date -
Mar 4, 2004
app pub date -
Aug 27, 2002
filing date -
Aug 27, 2002
priority date (Note) -
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Abstract
A method of forming a power device (10) includes forming a power transistor (27) and a pull-down transistor (28) on a semiconductor die (36). The pull-down transistor (28) is enabled to rapidly and predictably disable the power transistor (27). The pull-down transistor (28) remains enabled for a first time period during the enabling of the power transistor (27) to facilitate rapidly and predictably enabling the power transistor (27).
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