Methods and compositions for chemical mechanical polishing shallow trench isolation substrates

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United States of America Patent

PATENT NO 6811470
APP PUB NO 20030036339A1
SERIAL NO

10194560

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Abstract

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Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bonner, Benjamin A Campbell, CA 20 219
Hsu, Wei-Yung Santa Clara, CA 99 1485
Iyer, Anand N Santa Clara, CA 22 124
Kim, Yong-Sik R Santa Clara, CA 1 6
Kumar, Deepak N Sunnyvale, CA 4 14
Osterheld, Thomas H Mountain View, CA 105 1419
Smith, Christopher W Los Altos Hills, CA 27 1277
Zhang, Huanbo Cupertino, CA 32 76

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