Partially crosslinked polymer for bilayer photoresist
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United States of America Patent
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Nov 2, 2004
Issued Date -
N/A
app pub date -
May 12, 2003
filing date -
Feb 18, 2000
priority date (Note) -
Expired
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Abstract
The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
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