Method of fabricating a semiconductor device with a passivation film
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United States of America Patent
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-
Nov 9, 2004
Grant Date -
Aug 7, 2003
app pub date -
Jul 25, 2002
filing date -
Feb 1, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An uppermost interlayer isolation film is provided on a semiconductor substrate. An uppermost wire is provided on the uppermost interlayer isolation film. A silicon oxide film is provided to cover the upper surface and the side wall of the uppermost wire. A nitride film is provided on the uppermost interlayer isolation film to cover the uppermost wire through the silicon oxide film. A polyimide film is provided on the nitride film. A portion of the uppermost interlayer isolation film other than a portion located under the uppermost wire is downwardly scooped. The nitride film covers the scooped portion of the uppermost interlayer isolation film. According to the present invention, a semiconductor device improved to be capable of improving coverage of a silicon nitride passivation film is obtained.
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