Method to perform deep implants without scattering to adjacent areas
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United States of America Patent
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Nov 9, 2004
Issued Date -
N/A
app pub date -
Jun 5, 2002
filing date -
Jun 5, 2002
priority date (Note) -
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Abstract
A method of fabricating an integrated circuit in and on a semiconductor substrate with deep implantations by applying a scattered ion capturing layer in the resist mask opening to capture any implanted ions scattered in the resist and deflected out of the resist into the mask opening to prevent these ions from reaching the semiconductor substrate and affecting the concentration of ions at the edge of the mask and thus the performance of the integrated circuit.
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