Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method
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United States of America Patent
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Nov 9, 2004
Grant Date -
Feb 19, 2004
app pub date -
Mar 19, 2003
filing date -
Mar 20, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An object of the present invention is to provide a technique for forming an ohmic connection between a semiconductor and a metal efficiently in a short period of time. The present invention provides a method of forming at least one electrode on a surface of a semiconductor, wherein a metal or alloy for the electrode is rubbed against a predetermined region of the semiconductor surface so as to be adhered by frictional force and frictional heat to the predetermined region of the semiconductor as an electrode and part of the adhered metal or a metal of the alloy is diffused into an inside of the semiconductor by the frictional heat thereby to be formed into an ohmic electrode substantially simultaneously when the metal or alloy is adhered by the frictional force and frictional heat to the predetermined region of the semiconductor.
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