Method of plugging through-holes in silicon substrate
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United States of America Patent
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Nov 9, 2004
Grant Date -
Dec 25, 2003
app pub date -
Jun 12, 2003
filing date -
Jun 19, 2002
priority date (Note) -
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Abstract
The through-holes 2 in the silicon substrate 1 are plugged with the metal 8 by means of electrolytic plating. After both faces of the silicon substrate are polished and smoothed, high pressure annealing is conducted on the silicon substrate so as to remove minute voids generated in the plugged metal and, therefore, the preciseness and density of the plugged metal is enhanced.
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