Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix
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United States of America Patent
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Nov 9, 2004
Grant Date -
Feb 26, 2004
app pub date -
Mar 18, 2003
filing date -
Sep 19, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention concerns an active TFT matrix for optical sensor comprising a substrate, a TFT transistor matrix formed on said substrate, a set of transistor control lines (3): a conductor level (4) according to a specific pattern forming an electrode array (5), each electrode (5) defining a zone called pixel: a set of columns (10) for load transfer between the electrodes (5) and an external electronics. The pixel electrode (5) is located entirely inside an outline delimited by two lines (3) and two successive columns (10), a protective gap (g1, g2) being provided between the inside edge of said outline and the periphery of the pixel (5) such that the pixel electrode (5) does not cover either the lines (3) or the columns (10).
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