Backside buried strap for SOI DRAM trench capacitor
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United States of America Patent
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-
Nov 9, 2004
Issued Date -
N/A
app pub date -
Jul 8, 2003
filing date -
Jun 3, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In SOI integrated circuits having trench capacitor DRAM arrays, the decreasing thickness of the insulating layer causes cross-talk between the passing wordline traveling over the trench capacitor. Increasing the depth of the recess at the top of the trench and undercutting the insulating layer laterally permits the buried strap from the capacitor center electrode to make contact to the back side of the SOI layer, thereby increasing the vertical separation between the passing wordline and the strap.
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