Semiconductor device and method of manufacturing the same
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United States of America Patent
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Nov 9, 2004
Grant Date -
Mar 6, 2003
app pub date -
Jun 24, 2002
filing date -
Aug 17, 2001
priority date (Note) -
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Abstract
The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
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