Architecture of a phase-change nonvolatile memory array
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United States of America Patent
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Nov 9, 2004
Grant Date -
Oct 2, 2003
app pub date -
Dec 12, 2002
filing date -
Dec 27, 2001
priority date (Note) -
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Abstract
The phase-change nonvolatile memory array is formed by a plurality of memory cells extending in a first and in a second direction orthogonal to each other. A plurality of column-selection lines extend parallel to the first direction. A plurality of word-selection lines extend parallel to the second direction. Each memory cell includes a PCM storage element and a selection transistor. A first terminal of the selection transistor is connected to a first terminal of the PCM storage element, and the control terminal of the selection transistor is connected to a respective word-selection line. A second terminal of the PCM storage element is connected to a respective column-selection line, and a second terminal of the selection transistor is connected to a reference-potential region while reading and programming the memory cells.
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