Synchronous dynamic random access memory for burst read/write operations

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United States of America Patent

PATENT NO 6816433
APP PUB NO 20030185089A1
SERIAL NO

10426316

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Abstract

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A synchronous DRAM has cell arrays arranged in matrix, divided into banks accessed asynchronously, and n bit I/O buses for transferring data among the cell arrays. In the DRAM, the banks are divided into m blocks, the n-bit I/O buses located between adjacent banks, is used for time sharing between adjacent banks, the n bit I/O buses are grouped into n/m-bit I/O buses, every n/m bits for each block of m blocks, and in each block in each bank, data input/output are carried out between the n/m-bit I/O buses and data bus lines in each block. A synchronous DRAM includes a first and second internal clock systems for controlling a burst data transfer in which a string of burst data being transferred in synchronism with an external clock signal, when one of the internal clock systems is driven, the burst data transfer is commenced immediately by the selected internal clock system.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA72-34 HORIKAWA-CHO SAIWAI-KU KAWASAKI-SHI KANAGAWA 2120013 ?2120013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Toda, Haruki Yokohama, JP 246 5348

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