Method for moat nitride pull back for shallow trench isolation
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United States of America Patent
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Nov 16, 2004
Grant Date -
Apr 8, 2004
app pub date -
Oct 2, 2002
filing date -
Oct 2, 2002
priority date (Note) -
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Abstract
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed outwardly of the first oxide layer. A second oxide layer is formed outwardly of the nitride layer. A trench is formed through the first oxide layer, the nitride layer, and the second oxide layer and into the semiconductor layer. With the second oxide layer protecting an upper surface of the nitride layer, the nitride layer is etched to form a lateral recessed side boundary of the trench at the nitride layer. The shallow trench isolation layer is formed in the trench.
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