Temperature sensor
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United States of America Patent
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Nov 16, 2004
Grant Date -
Sep 18, 2003
app pub date -
Mar 11, 2003
filing date -
Mar 12, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A temperature sensor is provided with a temperature-sensitive element on a surface of a monocrystalline substrate, wherein the temperature-sensitive element is made of a platinum thin-film resistor and is produced as an epitaxial layer. The monocrystalline substrate can be an electrically insulating material, preferably .alpha.-Al.sub.2 O.sub.3 or MgO. Alternatively, the substrate may be an electrically conducting material, such as silicon, with an electrically insulating epitaxial layer arranged between the substrate and the platinum thin-film resistor. The platinum thin-film resistor epitaxial layer is preferably deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE).
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