Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
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United States of America Patent
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Nov 23, 2004
Grant Date -
Jul 17, 2003
app pub date -
Nov 26, 2002
filing date -
Nov 28, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a stubstrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation and which contains a metal oxide having a perovskite structure, a method for manufacturing a substrate for an electronic device, and an electronic device provided with such a substrate for an electronic device. A stubstrate for an electronic device includes a Si substrate, a buffer layer which is formed by epitaxial growth on the Si substrate and which contains a metal oxide having a NaCl structure, and a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation on the buffer layer and which contains a metal oxide having a perovskite structure. The Si substrate is preferably a (100) substrate or a (110) substrate from which a natural oxidation film is not removed. The buffer layer preferably has an average thickness of 10 nm or less.
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