Lateral power MOSFET for high switching speeds
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United States of America Patent
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Nov 30, 2004
Issued Date -
N/A
app pub date -
Jan 10, 2003
filing date -
Oct 29, 2001
priority date (Note) -
Expired
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Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.
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