Synchronous semiconductor memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6826104
APP PUB NO 20030035335A1
SERIAL NO

10227779

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In an FCRAM having a late write function, when a first command signal indicates 'write active', whether a write operation or an auto-refresh operation is to be performed is determined on the basis of a second command signal. For example, when the second command signal indicates 'write', a write operation for a memory cell is performed by a late write scheme. When the second command signal indicates 'auto-refresh', an auto-refresh operation is performed. In the last write cycle of a write operation immediately preceding this auto-refresh operation, addresses for selecting a memory cell as an object of auto-refresh are predetermined. After data write to a memory cell is completed in the last write cycle, row precharge for auto-refresh is performed. After that, an auto-refresh operation (i.e., a data read operation and a data restore operation) is performed for the selected memory cell.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawaguchi, Kazuaki Kawasaki, JP 18 213
Ohshima, Shigeo Yokohama, JP 71 1069

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