Semiconductor saturable absorber device, and laser
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United States of America Patent
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Nov 30, 2004
Grant Date -
Sep 18, 2003
app pub date -
Mar 14, 2002
filing date -
Mar 14, 2002
priority date (Note) -
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Abstract
According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg reflector a layered structure with at least one layer with saturably absorbing semiconductor material. A low index dielectric coating layer is placed on said outermost surface of said structure. The Bragg reflector and said layered structure are designed in a manner that the field intensity of radiation of said given frequency takes up a maximum at or near the interface between said structure and said dielectric material. The thickness of said dielectric coating layer may be varied and may for example be a quarter of a wavelength of said electromagnetic radiation in the dielectric material.
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