Deposition of tungsten films
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United States of America Patent
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-
Dec 7, 2004
Grant Date -
Aug 14, 2003
app pub date -
Feb 11, 2002
filing date -
Feb 11, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 .ANG.. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
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