Radiation-emitting semiconductor component
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United States of America Patent
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Dec 7, 2004
Grant Date -
Apr 3, 2003
app pub date -
Sep 9, 2002
filing date -
Sep 28, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.
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