Uneven pattern sensing device
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United States of America Patent
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-
Dec 7, 2004
Grant Date -
Sep 12, 2002
app pub date -
Mar 5, 2002
filing date -
Mar 7, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
What are formed on an insulating substrate are gate electrodes and data electrodes provided in a grid pattern, a TFT provided in each grid and connected to the gate electrode and the data electrode, an interlayer insulating film formed on the TFT and including a contact hole penetrating the film itself, and a sense electrode provided on the interlayer insulating film and passing through the contact hole. On the interlayer insulating film, an upper layer insulating film is formed so as to cover the sense electrode. A surface of the interlayer insulating film in which surface the sense electrode is formed is flat. On this account, it is possible to provide an uneven pattern sensing device capable of smoothing out a surface thereof without any increase of the manufacturing process and limitation of a choice of materials for a protective film.
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