Microwave plasma processing apparatus

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United States of America Patent

PATENT NO 6830652
SERIAL NO

09678741

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Abstract

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In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325
TADAHIRO OHMIMIYAGI PREFECTURE JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirayama, Masaki Sendai, JP 135 4253
Ohmi, Tadahiro 1-17-301, Komegafukuro 2-Chome, Aoba-Ku, Sendai-Shi, Miyagi 980-0813, JP 798 14083

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