Formation of boride barrier layers using chemisorption techniques
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United States of America Patent
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Dec 14, 2004
Grant Date -
Jan 29, 2004
app pub date -
Mar 13, 2003
filing date -
Jun 27, 2000
priority date (Note) -
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Abstract
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
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