Electron beam process during damascene processing
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United States of America Patent
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Dec 14, 2004
Issued Date -
N/A
app pub date -
Oct 17, 2000
filing date -
Mar 17, 1999
priority date (Note) -
Expired
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Abstract
A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring lines are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.
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