Ferroelectric composite material, method of making same and memory utilizing same
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United States of America Patent
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Dec 14, 2004
Grant Date -
Jul 8, 2004
app pub date -
Jul 22, 2003
filing date -
May 10, 2001
priority date (Note) -
Expired
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Abstract
A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400.degree. C. and 550.degree. C.
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