Diffusion barrier layer for semiconductor device and fabrication method thereof
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United States of America Patent
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Dec 14, 2004
Grant Date -
Mar 13, 2003
app pub date -
Oct 15, 2002
filing date -
Jan 20, 1998
priority date (Note) -
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Abstract
The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.
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