Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory
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United States of America Patent
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Dec 14, 2004
Grant Date -
N/A
app pub date -
Nov 25, 1996
filing date -
Nov 28, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An internal power-source potential supply circuit for supplying an internal power-source potential with high accuracy is disclosed. An external power-source potential (VCE) is connected to the source of a PMOS transistor (Q1) having a drain for applying an internal power-source potential (VCI) to a load (11) and a gate receiving a control signal (S1) from a comparator (1). The comparator (1) outputs the control signal (S1) on the basis of a comparison result between a reference potential (Vref) and a divided internal power-source potential (DCI). The drain of the PMOS transistor (Q1) is connected to a first end of a resistor (R1), and a current source (2) is connected between a second end of the resistor (R1) and ground. A voltage provided at a node (N1) serving as the second end of the resistor (R1) is applied to a positive input of the comparator (1) as the divided internal power-source potential (DCI).
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