Cyclical deposition of tungsten nitride for metal oxide gate electrode
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United States of America Patent
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Dec 21, 2004
Grant Date -
Aug 28, 2003
app pub date -
Feb 26, 2002
filing date -
Feb 26, 2002
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Abstract
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
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