Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications
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United States of America Patent
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Dec 21, 2004
Grant Date -
Feb 28, 2002
app pub date -
Aug 22, 2001
filing date -
Aug 23, 2000
priority date (Note) -
Expired
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Abstract
A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.
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