Edge termination in a trench-gate MOSFET
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United States of America Patent
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Dec 21, 2004
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N/A
app pub date -
Sep 10, 2002
filing date -
Sep 13, 2001
priority date (Note) -
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Abstract
To avoid premature breakdown at the edge of the active area of RESURF trench-gate MOS device, an edge field plate (24) can be placed with a connection to the gate and a second spaced field plate (24) in the same trench (12). The gate trench network (12) could be either formed by hexagon unit cells or by square unit cells. Since the RESURF condition requires a small cell pitch, self-aligned processing could be used.
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