Content addressable memory with PFET passgate SRAM cells
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United States of America Patent
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Dec 21, 2004
Grant Date -
May 27, 2004
app pub date -
Nov 25, 2002
filing date -
Nov 25, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A Content Addressable Memory (CAM) cell with PFET passgate SRAM cells which results in a smaller cell size because of the more balanced number of 8 PFET devices and 8 NFET devices. The PFET passgates allow the size of the SRAM cell pulldown devices to be reduced, and lower the power dissipation in the SRAM during standby or during read/write.
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