Temperature dependent write current source for magnetic tunnel junction MRAM
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United States of America Patent
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Dec 21, 2004
Issued Date -
N/A
app pub date -
Dec 18, 2003
filing date -
Feb 23, 2001
priority date (Note) -
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Abstract
An MRAM storage device includes temperature dependent current sources that adjust their outputs as temperature varies. Temperature dependent current sources include one or more diodes connected to a transistor. As temperature varies so does the voltage drop across the diodes. In addition, the MRAM data storage device includes at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a junction of a digit line and a bit line. Each end of each digit line is connected to temperature dependent current sources and current sinks. One end of each bit line is connected to a temperature dependent current source while the other end of each bit line is connected to a current sink. Two logic signals R and D are used to activate a write operation and determine the direction of the write current in the digit line.
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