Semiconductor package, semiconductor device, electronic device, and method of manufacturing semiconductor package
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United States of America Patent
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-
Dec 28, 2004
Grant Date -
N/A
app pub date -
Jun 4, 2001
filing date -
Jun 15, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
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