Film forming method, semiconductor device and semiconductor device manufacturing method
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United States of America Patent
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Dec 28, 2004
Grant Date -
Mar 7, 2002
app pub date -
Jul 13, 2001
filing date -
Jul 21, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si--H bonds and siloxanes having Si--H bonds and an oxygen-containing gas selected from a group consisting of O.sub.2, N.sub.2 O, NO.sub.2, CO, CO.sub.2, and H.sub.2 O.
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