Semiconductor module
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United States of America Patent
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-
Dec 28, 2004
Grant Date -
Apr 18, 2002
app pub date -
Nov 29, 1999
filing date -
Nov 30, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction. The collector electrode surface of an IGBT device is provided on a radiation board, and an element connecting conductor is bonded with conductive resin on the emitter electrode surface. The anode electrode surface of a diode device is bonded on it with the conductive resin. The IGBT device and the diode device are thus stacked and connected in the vertical direction.
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