MRAM having two write conductors
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United States of America Patent
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Dec 28, 2004
Grant Date -
Jun 10, 2004
app pub date -
Dec 7, 2002
filing date -
Dec 7, 2002
priority date (Note) -
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Abstract
A magnetic random-access memory (MRAM) cell according to an embodiment of the invention is disclosed that comprises a magnetic storage element having an easy axis and a hard axis, a write conductor positioned along one of the easy axis and the hard axis, and a write conductor positioned at a non-parallel and non-perpendicular angle to both of the easy axis and the hard axis.
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