Substrate processing method and substrate processing apparatus
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United States of America Patent
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-
Jan 4, 2005
Grant Date -
Feb 21, 2002
app pub date -
Aug 14, 2001
filing date -
Aug 15, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.
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