Method of film deposition using activated precursor gases
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United States of America Patent
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Jan 4, 2005
Grant Date -
Jan 29, 2004
app pub date -
Jul 10, 2002
filing date -
Jul 10, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
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