Indium-tin oxide (ITO) layer and method for producing the same
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United States of America Patent
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Feb 1, 2005
Grant Date -
Sep 11, 2003
app pub date -
May 1, 2003
filing date -
May 12, 2000
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Abstract
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 .mu..OMEGA.cm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.
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