Method for forming diffusion barrier film of semiconductor device
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United States of America Patent
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Feb 1, 2005
Grant Date -
Dec 12, 2002
app pub date -
May 30, 2002
filing date -
Jun 12, 2001
priority date (Note) -
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Abstract
A method for forming a diffusion barrier layer of a semiconductor device by using an Atomic Layer Deposition (ALD) is disclosed, which, in a method for forming a diffusion barrier layer on an entire surface of a semiconductor substrate before forming a metal pipe connected with the semiconductor substrate through a contact hole, the contact hole being formed to expose one region of the semiconductor substrate by selectively removing an insulating interlayer on the semiconductor substrate, the method includes the steps of forming Ti/TiN layers without being exposed to the air by alternately providing a precursor set by using an atomic layer deposition (ALD) and many kinds of reacting gases, performing a silane treatment on the TiN layer, and forming a Ti thin layer by the ALD.
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